Senior Process Engineer - SiC Epitaxy, (APM), IME

Location
D05 Clementi New Town, Hong Leong Garden, Pasir Panjang
Job Type
Full-time
Experience
Mid
Category
General
Salary
$4,500 - $9,000
Posted
1 week ago
Expires
Apr 18, 2026
Views
1

Job Details

Vacancies

1 position

Experience Required

No experience required

Job Description

We're seeking a talented and passionate Process Engineer/Senior Process Engineer to join our epitaxy team, Advanced Process Modules (APM). The successful candidate will be responsible for SiC epitaxy process development for next-generation power devices. This position is within the National Semiconductor Translation and Innovation Centre (NSTIC) – Power Electronics.

Responsibilities:

  • Design and implement innovative SiC epitaxial processes on an industrial hot-wall CVD system, focusing on achieving exceptional dopant and thickness uniformity, as well as minimal extended defect density on 6- and 8-inch SiC substrates.
  • Perform metrology and characterization of SiC epilayers (e.g., dopant and thickness uniformity, surface roughness, crystal quality, stress, carrier lifetime, etc.).
  • Conduct optical and photoluminescence inspections of extended defects in SiC epilayers, including critical defects such as micropipes, carrots, triangles, downfalls, stacking faults, and basal plane dislocations.
  • Design experiments to minimize point and extended defect densities in SiC, with emphasis on enhancing SiC power device performance.
  • Develop advanced epitaxy processes for cutting-edge devices, such as SiC selective epitaxy and SiC trench-filling epitaxy.
  • Prepare technical presentations and papers for internal meetings, conferences, and journals and draft technical disclosures/IP.
  • Collaborate with IME's NSTIC – Power team to address key technical challenges in the SiC power electronics industry.
  • Contribute ideation for new funding proposals.
  • Perform all other reasonable duties as assigned.

Requirements:

  • Bachelor's or Master's degree in Electrical/Electronic Engineering, Materials Science, Physics, Chemistry or a related field.
  • 2 to 3 years of experience in semiconductor CVD process, preferrably epitaxy process development or manufacturing (Si, SiC GaN, or other semiconductor materials).
  • Strong knowledge of semiconductor processes (e.g., lithography, etching) and characterization techniques (e.g., SEM, TEM, XRD).
  • Excellent communication, collaboration, and self-motivation skills.
  • Avid technical reader, critical thinker, and strong team player.
  • Proficiency in data analysis and DOE tools (e.g., Excel, JMP, Origin) is an advantage.

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